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          ? 2000 IXYS All rights reserved 1 - 2 VRSM V(BR)min VRRM Anode Cathode V V V on stud on stud 900 - 800 DS35-08A DSI35-08A 1300 - 1200 DS35-12A DSI35-12A 1300 1300 1200 DSA35-12A DSAI35-12A 1700 1750 1600 DSA35-16A DSAI35-16A 1900 1950 1800 DSA35-18A DSAI35-18A Only for Avalanche Diodes Symbol Test Conditions Maximum Ratings I IF(RMS)F(AVM) T TVJcase = 100C; 180 sine 49 A = TVJM 80 A PRSM DSA(I) types, TVJ = T VJM, tp = 10 s11kWInternational standard package,JEDEC DO-203 AB (DO-5) IFSM T VVJR = 45C; t = 10 ms (50 Hz), sine 650 A = 0 t = 8.3 ms (60 Hz), sine 690 A T VVJR = T = 0 t = 8.3 ms (60 Hz), sine 640 AVJM t = 10 ms (50 Hz), sine 600 A I2t T VVJR = 45C t = 10 ms (50 Hz), sine 2100 A2s = 0 t = 8.3 ms (60 Hz), sine 2000 A2s T VVJR = T = 0 t = 8.3 ms (60 Hz), sine 1700 AVJM 2s t = 10 ms (50 Hz), sine 1800 A2s T TVJ TVJMstg -40...+180 C 180 C -40...+180 C Md Mounting torque 4.5-5.5 Nm 40-49 lb.in. Weight 15 g VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A Features Planar glassivated chips Applications High power rectifiers Field supply for DC motors Power supplies Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Symbol Test Conditions Characteristic Values IR TVJ = TVJM; VR = V RRM 4mA VF IF= 150 A; TVJ = 25 C 1.55 V V r T0 T For power-loss calculations only 0.85 V TVJ = TVJM 4.5 m R RthJCthJH DC current 1.05 K/W DC current 1.25 K/W d dS aA Creepage distance on surface 4.05 mm Strike distance through air 3.9 mm Max. allowable acceleration 100 m/s2 Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions DS 35 DSI 35 DSA 35 DSAI 35 Rectifier Diode Avalanche Diode A = Anode C = Cathode DO-203 AB DS DSIA DSA DSAIC C A 1/4-28UNF |